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Mechanical exfoliation WS2 on SiO2/Si

$250.00
Sale price  $250.00 Regular price 
Description

Mechanical exfoliation WS2 on SiO2/SiProduct Name Name: Mechanical exfoliation WS2 on SiO2 Si Product Overview Mechanical stripping of silicon oxide silicon substrate single layer molybdenum disulfide is a kind of single layer film material prepared from molybdenum disulfide block by mechanical stripping. The mechanical stripping method, also known as the "tape stripping method", was first proposed by Novoselov et al in 2004 when preparing single layer graphene. This method uses the

High carrier mobility: Compared with other isomers of phosphorus

forming cellulose nanocrystals

Low surface energy: This makes it have good hydrophobic and oleophobic properties

Small particle size makes graphene easier to distribute evenly

Good conductivity: able to conduct current

Petrochemical industry: used for catalytic cracking

can effectively remove the catalyst and other impurities

and single-layer graphene is composed of a single layer of carbon atoms

called a super cage

Length<10μm

which crystallizes along the 0001 direction

Biomedicine field: Its unique hollow structure and nanotube diameter can provide space for containing drugs

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Ships within 48 hours · Estimated delivery Aug 15 - Aug 20

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